| Title |
Crystallized Nano-thick ZnO Films with Low Temperature ALD Process |
| Authors |
유병관(Byung Kwan Yu); 한정조(Jeung Jo Han); 송오성(Oh Sung Song) |
| DOI |
https://doi.org/10.3365/KJMM.2010.48.12.1109 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
ALD; thin films; crystallinity; deposition; X-ray diffraction |
| Abstract |
ZnO thin films were deposited on Si(100) substrates at low temperatures (44℃~210℃) by atomic layer deposition using DEZn (diethyl zinc) and water as precursors. The film thickness was measured by ellipsometry calibrated with cross-sectional TEM. The phase formation, microstructure evolution, UV-absorbance, and chemical composition changes were examined by XRD, SEM, AFM, TEM, UV-VIS-NIR, and AES, respectively. A uniform amorphous ZnO layer was formed even at 44℃ while stable crystallized ZnO films were deposited above 90℃. All the samples showed uniform surface roughness below 3 nm. Fully crystallized ZnO layers with a band-gap of 3.37 eV without carbon impurities can be formed at substrate temperatures of less than 90℃. |