| Title |
Fabrication of Mo Thin Film by Hydrogen Reduction of MoO3 Powder for Back Contact Electrode of CIGS |
| Authors |
김영도(Young Do Kim); 김세훈(Se Hoon Kim); 조태선(Tae Sun Jo) |
| DOI |
https://doi.org/10.3365/KJMM.2011.49.2.187 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
solar cells; vapor deposition; hydrogen reduction; electrical properties; conductivity/resistivity |
| Abstract |
In order to obtain a suitable back contacting electrode for Cu(InGa)Se2-based photovoltaic devices, a molybdenum thin film was deposited using a chemical vapor transport (CVT) during the hydrogen reduction of MoO3 powder. A MoO2 thin film was successfully deposited on substrates by using the CVT of volatile MoO3(OH)2 at 550℃ for 60 min in a H2 atmosphere. The Mo thin film was obtained by reduction of MoO2 at 650℃ in a H2 atmosphere. The Mo thin film on the substrate presented a low sheet resistance of approximately 1 Ω/sq. |