| Title |
Electrical Properties of ITO/Ag/ITO Conducting Transparent Thin Films |
| Authors |
채홍철(Hong Chol Chae); 백창현(Chang Hyun Baeg); 홍주화(Joo Wha Hong) |
| DOI |
https://doi.org/10.3365/KJMM.2011.49.2.192 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
optical material; sputtering; electrical properties; AES |
| Abstract |
The multi-layered thin film with an ITO/Ag/ITO structure was produced on PET by using magnetron reactive sputtering method. First, 30 nm of ITO thin film was coated on PET by using normal temperature process. Then 20-52 nm of the Ag thin film was coated. Lastly, 30 nm of ITO thin film was coated on Ag layer. The sample of the 20 nm Ag thin film showed more than 70% transmission and a 2.7Ω/□ sheet resistance. When compared to the existing single-layered transparent conducting thin film, multi-layered film was found to be superior with about 5Ω/□ less sheet resistance. However, since the Ag layer became thinner, the band gap energy needs to be increased to more than 3.5 eV. |