| Title |
Property of Nano-thick Silicon Films Fabricated by Low Temperature Inductively Coupled Plasma Chemical Vapor Deposition Process |
| Authors |
신운(Yun Shen); 심갑섭(Gap Seop Sim); 최용윤(Yong Yoon Choi); 송오성(Oh Sung Song) |
| DOI |
https://doi.org/10.3365/KJMM.2011.49.4.313 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
Si thin films; ICP-CVD; crystallization; TEM; Low temperature process |
| Abstract |
100 nm-thick hydrogenated amorphous silicon (α-Si:H) films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to 550℃. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >400℃. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above 400℃ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at 550℃ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates. |