| Title |
Electron Field Emission Characteristics of Silicon Nanodots Formed by the LPCVD Technique |
| Authors |
안승만(Seung Man An); 임태경(Tae Kyung Yim); 이경수(Kyung Su Lee); 김정호(Jeong Ho Kim); 김은겸(Eun Kyeom Kim); 박경완(Kyoung Wan Park) |
| DOI |
https://doi.org/10.3365/KJMM.2011.49.4.342 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
nanostructured materials; vapor deposition; electrical properties; AFM; silicon nanodots; electron field emission |
| Abstract |
We fabricated the silicon nanodots using the low pressure chemical vapor deposition technique to investigate their electron field emission characteristics. Atomic force microscope measurements performed for the silicon nanodot samples having various process parameters, such as, deposition time and deposition pressure, revealed that the silicon nanodots with an average size of 20 nm, height of 5 nm, and density of 1.3×10(11) cm-2 were easily formed. Electron field emission measurements were performed with the silicon nanodot layer as the cathode electrode. The current-voltage curves revealed that the threshold electric field was as low as 8.3 V/㎛and the field enhancement factor reached as large as 698, which is compatible with the silicon cathode tips fabricated by other techniques. These electron field emission results point to the possibility of using a silicon-based light source for display devices. |