| Title |
Fracture Strength Measurement of Single Crystal Silicon Chips as a Function of Loading Rate during 3-Point Bending Test |
| Authors |
이동기(Dong Ki Lee); 이성민(Seong Min Lee) |
| DOI |
https://doi.org/10.3365/KJMM.2012.50.2.146 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
single crystal silicon; fracture strength; crack; Loading rate; crystal structure |
| Abstract |
The present article shows how the fracture strength of single crystal silicon chips, which are generally used as semiconductor devices, is influenced by loading rate variation during a 3-point bending test. It was found that the fracture strength of the silicon chips slightly increases up to 4% with increasing loading rate for loading rates lower than 20 mm/min. Meanwhile, the fracture strength of the chips hardly increases with increase of loading rate to levels higher than 40 mm/min. However, there was an abrupt transition in the fracture strength within a loading rate range of 20 mm/min to 40 mm/min. This work explains through microscopic examination of the fracture surface of all test chips that such a big transition is related to the deflection of crack propagation direction from the (011) [100] system to the (111) [211] system in a particular loading rate (i.e. from 20 mm/min to 40 mm/min). |