| Title |
Study on Self-Organized Ru Dots Using ALD and Low Temperature Rapid Thermal Annealing Process |
| Authors |
박종승(Jong Seung Park); 노윤영(Yun Young Noh); 송오성(Oh Sung Song) |
| DOI |
https://doi.org/10.3365/KJMM.2012.50.8.557 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
Ru dots; annealing; agglomeration; ALD; RTA |
| Abstract |
Self-organized ruthenium (Ru) dots were fabricated by 400℃ RTA (rapid thermal annealing) and ALD (atomic layer deposition). The dots were produced under the 400℃ RTA conditions for 10, 30 and 60 seconds on all Si (100)/200 nm-SiO2, glass, and glass/fluorine-doped tin oxide (FTO) substrates, Electrical sheet resistance, and surface microstructure were examined using a 4-point probe and FE-SEM (field emission scanning electron microscopy). Ru dots were observed when a 30 nm-Ru layer on a Si (100)/200 nm-SiO2 substrate was annealed for 10, 30 and 60 seconds, whereas the dots were only observed on a glass substrate when a 50 nm-Ru layer was annealed on glass. For a glass/FTO substrate, RTA <30 seconds was needed for 30 nm Ru thick films. Those dots can increase the effective surface area for silicon and glass substrates by up to 5-44%, and by 300% for the FTO substrate with a < 20° wetting angle. |