| Title |
Thermodynamic Comparison of Silicon Carbide CVD Process between CH3SiCl3-H2 and C3H8-SiCl4-H2 Systems |
| Authors |
최균(Kyoon Choi); 김준우(Jun Woo Kim) |
| DOI |
https://doi.org/10.3365/KJMM.2012.50.8.569 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
Thin film; vapor deposition; phase diagram; thermodynamic Calculation; computer simulation |
| Abstract |
In order to understand the difference in SiC deposition between the CH3SiCl3-H2 and C3H8-SiCl4-H2 systems, we calculate the phase stability among B-SiC, graphite and silicon. We constructed the phase-diagram of B-SiC over graphite and silicon via computational thermodynamic calculation considering pressure (P), temperature (T) and gas composition (C) as variables. Both P-T-C diagrams showed a very steep phase boundary between the SiC+C and SiC region perpendicular to the H/Si axis, and also showed an SiC+Si region with a H/Si value of up to 6700 in the C3H8-SiCl4-H2, and 5000 in the CH3SiCl3-H2 system, This difference in phase boundaries is explained by the ratio of Cl to Si, which is 4 for the C3H8-SiCl4-H2 system and 3 for the C3H8-SiCl4-H2 system. Because the C/Si ratio is fixed at 1 in the CH3SiCl3-H2 system while it can be variable in the C3H8-SiCl4-H2 system, the functionally graded material is applicable for better mechanical bonding during SiC coating on graphite substrate in the C3H8-SiCl4-H2 system. |