| Title |
A study on a laser doped selective emitter for the high efficiency commercial Si solar cells |
| Authors |
김일환(Il Hwan Kim); 김기형(Ki Hyung Kim); 조영현(Young Hyun Cho); 이수홍(Soo Hong Lee) |
| DOI |
https://doi.org/10.3365/KJMM.2013.51.6.437 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
solar cells; selective emitter; laser doping |
| Abstract |
Laser doping is used as an alternative to thermal annealing for formation of selective emitter Si solar cells. Laser processing has many advantages, such as a simple and low temperature process, high throughput, and low cost ownership. For fabrication of selectively low sheet resistance regions, we used a phosphosilicate glass layer as a dopant source, which was produced after furnace diffusion. We achieved an efficiency of 18.88% by using the laser doping with a PSG layer. (Received September 6, 2012). |