| Title |
The Effect of Se Content in Precursors on the Properties of CuInSe2 Films |
| Authors |
박광훈(Gwang Hoon Park); 박재형(Jae Hyoung Park); 하준석(Jun Seok Ha); 고항주(Hang Ju Ko) |
| DOI |
https://doi.org/10.3365/KJMM.2013.51.11.843 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
solar cells; sputtering; interfaces; X-ray diffraction; CuInSe2 film |
| Abstract |
We studied the effect on physical properties of CuInSe2 (CIS) thin films by change of the Se content in Cu-In-Se precursors. The three kinds of precursors with different Se content were deposited by a hybrid sputtering system which was equipped with the Selenium Knudsen cell (Se K-cell). The precursors were heated in an Se atmosphere for 15 minutes at 425 ℃, which produced crystalline CIS films. We characterized the crystalline CIS films using scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS), x-ray diffraction (XRD), and a Hall effect measurement system. The size of the island in the CIS films was reduced with an increasing Se content in the Cu-In-Se precursors. We found that the island structure in the CIS films disappeared with precursors of Se content over 19 at%. We were able to make a highly adhesive CIS film to Mo back contacts by using precursors with Se content of 19 at%. The solar cells fabricated with the CIS films using precursors with an Se content of 19 at% achieved 8.2% efficiency. |