| Title |
Characteristics of ZnO Thin Film Transistors Fabricated Using a Microwave Sol-Gel Method |
| Authors |
(Kyong Min Kim); (Eun Kyeom Kim); (Young Ill Kim); (Kyoung Wan Park) |
| DOI |
https://doi.org/10.3365/KJMM.2014.52.2.155 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
ZnO; semiconductors; sol-gel; electrical properties; TEM |
| Abstract |
We synthesized a gel-like phase of zinc oxide (ZnO) by employing a microwave-assisted technique and then used this gel-like phase to fabricate ZnO thin film transistors (TFTs). By utilizing this method, we were able to prepare the ZnO gel-like phase in a relatively short time and obtained polycrystalline ZnO thin films. This microwave-assisted technique also allows the use of low-temperature thermal processes in the fabrication of ZnO-TFTs. The bottom-gate TFTs with a ZnO layer as the active channel exhibited a field effect mobility of 0.6 cm2/V·s, a sub-threshold slope of 9 V/decade, and an on/off current ratio greater than 104. These results point to the possibility of using microwave-assisted techniques for transparent and flexible electronic devices based on ZnO. †(Received July 16, 2013) |