| Title |
Review Paper : Effect of Microstructural Evolution on Electrical Properties of the Copper Electrodeposits for ULSI |
| Authors |
허석환(Seok Hwan Huh); 전형진(Hyoung Jin Jeon); 추현수(Hyun Soo Chu); 송영석(Young Seok Song); 이성근(Sung Keun Lee); 이효종(Hyo Jong Lee); 이의형(Ui Hyoung Lee) |
| DOI |
https://doi.org/10.3365/KJMM.2014.52.11.943 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
copper electrodeposits; crystallography; grain growth; electrical resistivity; electron backscattered diffraction |
| Abstract |
Copper electrodeposits annealed at 80 ℃ were investigated by electrical resistance measurement, X-ray diffraction and electron backscattered diffraction analyses. The decrease of electrical resistivity had a linear relationship with the re-crystallized area. Interestingly, the texture coefficient of (200) orientation increased as the re-crystallization occurred. Such appearance of (200) texture during annealing seemed to be related to the residual strain in the copper electrodeposits. It is possible to evaluate the progress of grain growth by measuring the electrical resistivity or texture coefficient in copper electrodeposits. (Received July 23, 2013) |