| Title |
Influence of Annealing Temperature on the Microstructural and Electrical Characteristics of MgZnSnO Channel Layers for Thin Film Transistors |
| Authors |
김호범(Ho Beom Kim); 이호성(Ho Seong Lee) |
| DOI |
https://doi.org/10.3365/KJMM.2014.52.12.1009 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
oxides; sol-gel; electrical properties; microstructure; transmission electron microscopy (TEM) |
| Abstract |
Thin film transistors (TFTs) with Mg-doped ZnSnO (MZTO) channel layers were fabricated by a sol-gel process. The effect of annealing temperature on the electrical characteristics of bottom-gate MZTO TFTs was investigated. For the sample annealed at 400 ℃, an amorphous phase was formed, while for the sample annealed at 600 ℃, a nanocrystalline MZTO film was obtained. The electrical properties of MZTO TFTs were very sensitive to the annealing temperature. High temperature annealing caused the threshold voltage to shift toward a negative direction and decreased the field-effect mobility and on/off current ratio. The MZTO TFT annealed at 400 ℃ showed an appropriate threshold voltage, on/off current ratio, and field-effect mobility. |