| Title |
N-Electrode Optimization of GaN-Based Vertical Light-Emitting Diode Single-Chip with 3-W Output Power |
| Authors |
최원식(Won Sik Choi); 정탁(Tak Jeong); 박형조(Hyung Jo Park); 임시종(See Jong Leem) |
| DOI |
https://doi.org/10.3365/KJMM.2015.53.4.302 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
optoelectronic materials; vapor deposition; electrical/optical properties; computer simulation; current spreading |
| Abstract |
N-type electrode optimization of GaN-based vertical light-emitting diode (VLED) single chip with 3-W output power is reported. The various n-type electrode designs were proposed and simulated to optimize the output power and operating voltage. In addition, the LED chip with optimized n-type electrode design was fabricated in the form of a vertical-injection structure with chip dimensions of 2×2 mm2. Electrical and optical characteristics of the VLED were measured up to 3 A injection current under pulsed operation condition. Output power and forward voltage at 2.7 A were obtained to be 3.1 W and 3.67 V, respectively. (Received May 21, 2014) |