| Title |
Growth Mechanism of Multi-Layer Graphene at Low-Temperature by Plasma Enhanced Chemical Vapor Deposition |
| Authors |
윤가영(Kayoung Yun); 정다솔(Dasol Cheang); 현지연(Jiyeon Hyun); 노애란(Aeran Roh); 허선(Sun Heo); (Lanxia Cheng); (Jiyong Kim); 차필령(Pil Ryung Cha); 이재갑(Jagab Lee); 남호석(Ho Seok Nam) |
| DOI |
https://doi.org/10.3365/KJMM.2015.53.11.820 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
graphene; PECVD; growth mechanism; synthesis; nickel catalyst |
| Abstract |
Multi-layer graphene is considered to be a potential replacement of copper wiring for LSI (large-scale integration). PECVD (plasma enhanced chemical vapor deposition) is one of the most reliable synthesis techniques to manufacture high-quality, large-scale graphene at low temperature. Compared with thermal CVD graphene, the relatively lower quality of PECVD graphene is its main drawback. In order to suggest a solution for this problem, we studied the growth mechanism of multi-layer graphene deposited onto nickel by PECVD at 400 ℃. We found that both segregation and solution-precipitation models affect the growth behavior of multi-layer graphene. To support this, we analyzed the influences of Ni-film thickness, cooling rate, and plasma energy on multi-layer graphene growth. The results from this study would be useful for optimizing graphene growth conditions for many applications. |