| Title |
The Structural, Electrical and Optical Properties of GZO/Ni Bi-layered Films |
| Authors |
공태경(Tae Kyung Gong); 전재현(Jae Hyun Jeon); 허성보(Sung Bo Heo); 차병철(Byung Chul Cha); 김준호(Jun Ho Kim); 정우창(Uoo Chang Jung); 박순(Soon Park); 공영민(Young Min Kong); 김대일(Daeil Kim) |
| DOI |
https://doi.org/10.3365/KJMM.2016.54.2.113 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
thin film; sputtering; electrical properties; optical properties; x-ray diffraction |
| Abstract |
To investigate the effect of a Ni buffer layer on the structural, electrical and optical properties of GZO (Ga Doped ZnO) thin films, GZO single layer and GZO/Ni bi-layered films were prepared on poly-carbonate (PC) substrates by RF and DC magnetron sputtering without intentional substrate heating. GZO films had an optical transmittance of 87.1% in the visible wavelength region and an electrical resistivity of 1.0×10-2 Ωcm, while GZO/Ni films had a lower resistivity of 1.2×10-3 Ωcm and an optical transmittance of 82.4%. Based on the figure of merit, it is clear that a 2 nm thick Ni buffer layer enhanced the opto-electrical performance of GZO films for use as transparent conducting oxides in flexible display applications (Received December 24, 2014) |