| Title |
Influence of a ZnO Buffer Layer on the Structural, Optical, and Electrical Properties of ITO/ZnO Bi-Layered Films |
| Authors |
(Sung Bo Heo); (Hyun Joo Moon); (Jun Ho Kim); (Daeil Kim) |
| DOI |
https://doi.org/10.3365/KJMM.2016.54.5.352 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
optoelectronic materials; optical properties; x-ray diffraction; sputtering; AFM |
| Abstract |
Sn-doped indium oxide (ITO) films and ITO/ZnO bi-layered films were prepared on polycarbonate substrates by RF magnetron sputtering without intentional substrate heating. In order to consider the influence of the ZnO thickness on the structural, optical, and electrical properties of ITO/ZnO films, the thickness of the ZnO buffer layer was varied from 5 to 20 nm. As-deposited ITO films show an average optical transmittance of 79.2% in the visible range and an electrical resistivity of 3.0×10-4 Ωcm, while films with a 5-nm thick ZnO buffer layer film show an electrical resistivity of 2.6×10-4 Ωcm and films with a 20-nm thick ZnO buffer layer show an optical transmittance of 82.0%. Based on the figure of merit, it is concluded that the ZnO buffer layer enhances the optical and electrical performance of ITO films used as transparent conducting oxides in flexible display applications. (Received October 13, 2015) |