| Title |
Ta-Ni Compound EUV Absorber Material to Mitigate Shadowing Effect and Improve Chemical Durability |
| Authors |
우동곤(Dong Gon Woo); 홍성철(Seongchul Hong); 김정식(Jung Sik Kim); 양철규(Chul Kyu Yang); 이종화(Jong Hwa Lee); 신철(Chul Shin); 안진호(Jinho Ahn) |
| DOI |
https://doi.org/10.3365/KJMM.2016.54.7.546 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
extreme ultraviolet lithography; semiconductor; sputtering; optical properties; computer simulation |
| Abstract |
Extreme ultraviolet lithography (EUVL) runs in reflective optics and the shadowing effect causes several new issues limiting the performance of EUV mask. To get over this shadowing effect, many studies are made by reducing the absorber thickness with high extinction coefficient materials. Nickel is a promising absorber material candidate which can replace tantalum compounds due to its high extinction coefficient. However, nickel is vulnerable to conventional mask cleaning process. In this paper, novel Ta-Ni compound material is fabricated by co-sputtering process and its improved chemical durability and shadowing effect is presented. †(Received April 25, 2016; Accepted May 4, 2016) |