| Title |
Effect of Post-Depositon Annealing on the Structural, Optical and Electrical Properties of Ti-doped Indium Oxide Thin Films |
| Authors |
(Sung-Bo Heo) ; (Hyun-Joo Moon) ; (Jeong-Hyeon Oh) ; (Young-Hwan Song) ; (Tae-Young Eom) ; (Jun-Ho Kim) ; (Daeil Kim) |
| DOI |
https://doi.org/10.3365/KJMM.2016.54.10.775 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
thin film; sputtering; electrical properties; x-ray diffraction; figure of merit |
| Abstract |
Ti-doped In₂O₃ (TIO) thin films were deposited on glass substrates by RF magnetron sputtering. The films were then annealed at 100, 200 or 300 °C for 30 min to investigate the effects of the annealing temperature on the films’ structural, electrical and optical properties. The films annealed at 200 °C and above were polycrystalline in phase, and their electrical resistivity decreased to as low as 7.5×10-4 Ω cm at the annealing temperature of 300°C. The films’optical transmittance in the visible wavelength region also improved from 77.7% to 81.2% when the annealing temperature was increased. The TIO films’ figures of merit were evaluated, showing that the TIO films annealed at 300 °C had better optical and electrical performance than the other films prepared using lower-temperature or no annealing. |