| Title |
Enhancement of the Opto-Electrical Properties of Ag Intermediate ZTO Films by Vacuum Annealing |
| Authors |
(Hyun-joo Moon); (Daeil Kim) |
| DOI |
https://doi.org/10.3365/KJMM.2017.55.3.209 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
thin films; sputtering; optical properties; AFM; figure of merit. |
| Abstract |
Sn-doped ZnO (ZTO)/Ag/ZTO tri-layer films were deposited on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering and then vacuum annealed at 100, 200 and 300 ℃ for 30 min with a proportions of H2/N2 gas flow of 6/6 sccm, to investigate the effects of annealing temperature on their electrical, and optical properties. After annealing at a temperature of 300 ℃, the optical transmittance in the visible wavelength region increased from 82.0 to 83.8% and their electrical resistivity decreased to as low as 5.38×10-5 Ω cm at an annealing temperature of 300 ℃. The figure of merit revealed that ZTO/Ag/ZTO films annealed at 300 ℃ have higher optical and electrical performance than the other TCO films prepared under different conditions. (Received June 7, 2016; Accepted August 30, 2016) |