| Title |
A Study of Silicon Crystallization Dependence upon Silicon Thickness in Aluminum-induced Crystallization Process |
| Authors |
(Doo Won Lee); (Muhammad Fahad Bhopal); (Soo Hong Lee) |
| DOI |
https://doi.org/10.3365/KJMM.2018.56.5.400 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
crystallization; solar cells; silicon |
| Abstract |
Aluminum-induced crystallization(AIC) is one of the ways to improve characteristics of thin-film poly-crystalline (TFPC) silicon solar cell since it shows large grain size and good properties for TFPC silicon solar cell. In AIC process, aluminum is firstly deposited on foreign substrate. Then, silicon is deposited on aluminum. Annealing was done below the eutectic temperature of aluminum and silicon(577 oC). Afterward, amorphous silicon layer is crystallized by aluminum-inducing process. In this paper, we report amorphous silicon layer thickness effects to crystallized silicon and hillock characteristics since the amorphous silicon layer is important layer for AIC.Crystallized silicon properties were analyzed dependent upon silicon thickness (50 % - 200 % than aluminum layer thickness). In case of the thick amorphous silicon (above 300 nm), hillocks grew on the crystallized silicon layer, Even though silicon hillock showed high crystallinity as a result of Raman spectroscopy, it had not enough grain size (average 4 μm). Therefore, as results, samples which had 113 % - 120 % silicon and aluminum thickness ratio showed proper thickness to use as a seed layer. |