| Title |
Doping Effect of Indium on Zinc-tin Oxide Thin-Film Transistor Using Electrohydrodynamic Jet Spray Technology |
| DOI |
https://doi.org/10.3365/KJMM.2019.57.4.258 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
EHD jet; spray; ZTO TFT; Indium doping |
| Abstract |
The effect of indium doping on zinc-tin oxide thin-film transistor was investigated using electrohydrodynamic (EHD) jet spray technology. EHD jet spray is a new and unique drop-on-demand patterning technology for printed electronics. After optimizing process parameters, the EHD jet spraying conditions were determined to be a voltage of 4.5 kV, a syringe speed of 0.032 μm/s, spraying time of 10 s, and a substrate temperature of 50 ℃. Indium doping increased metal-oxide formation in the thin-film, as confirmed by XPS. In addition, improved TFT electrical properties were obtained compared with non-doped TFTs by using EHD jet spray. A 0.1 M In-doped ZTO TFT showed a mobility of 7.40 cm2/V s, a threshold voltage of -3.4 V, an on-to-off current ratio of 1.87 × 106, and a sub-threshold slope of 1.2 V/dec. Improved hysteresis behavior of the TFT was also achieved by indium doping.(Received January 22, 2019; Accepted March 5, 2019) |