| Title |
Influence of Film Thickness on the Electrical and Optical Properties of ZnO/Ag/SnO2 Tri-Layer Films |
| Authors |
김유성(Yu-sung Kim); 최진영(Jin-young Choi); 박윤제(Yun-je Park); 최수현(Su-hyeon Choe); 공영민(Young-min Kong); 김대일(Daeil Kim) |
| DOI |
https://doi.org/10.3365/KJMM.2019.57.5.324 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
ZnO/Ag/SnO2; thin film; x-ray diffraction; electrical properties; optical properties |
| Abstract |
ZnO/Ag/SnO2 (ZAS) tri-layer films were prepared on glass substrates via RF and DC magnetron sputtering, and then the influence of the thickness of the ZnO and SnO2 layers on the optical and electrical properties of the ZAS films was investigated. As deposited ZnO 50 nm/Ag 10 nm/SnO2 50 nm films showed a higher figure of merit, 1.08 × 10-2 Ω-1, than the other films due to a high visible transmittance of 80.8% and a low resistivity of 1.21 × 10-4 Ωcm. From the observed results, it can be concluded that the ZnO 50 nm/Ag 10 nm/SnO2 50 nm tri-layer films can be used as a substitute for conventional transparent conducting oxide films in various opto-electrical applications.(Received March 20, 2019; Accepted April 4, 2019) |