The Journal of
the Korean Journal of Metals and Materials

The Journal of
the Korean Journal of Metals and Materials

Monthly
  • pISSN : 1738-8228
  • eISSN : 2288-8241

Editorial Office

Title Fabricating Elastomeric Photomask with Nanosized-Metal Patterns for Near-Field Contact Printing
Authors (Sangyoon Paik); (Gwangmook Kim); (Dongchul Seo); (Wooyoung Shim)
DOI https://doi.org/10.3365/KJMM.2021.59.2.142
Page pp.142-148
ISSN 1738-8228(ISSN), 2288-8241(eISSN)
Keywords near-field photolithography; elastomeric photomask; transferring process
Abstract When an elastomeric photomask is used for near-field contact printing, the high deformability of the elastomer mask plate enables gap-free full contact with the substrate, minimizing the effect of diffraction. This image-transfer technique provides sub-50 nm resolution and depth-of-focus-free lithographic capability with cost-efficient equipment. However, the method’s application is limited due to the lack of a wellestablished protocol for fabricating a nanoscale mask pattern on an elastomeric substrate, which remains a major technical challenge in the field of near-field contact printing. In this study, we present a reliable protocol for fabricating a metal-embedded polydimethylsiloxane (PDMS) photomask. Our fabrication protocol uses conventional nanofabrication processes to fabricate nanosized chromium mask patterns and then transfers the chromium patterns to an elastomeric mask plate using a sacrificial Ni layer. Our protocol provides a high flexibility mask pattern design, and highly stable metal patterns during transferring process. By careful optimizing the experimental parameters, we determined a perfect pattern transfer ratio, which avoided any mechanical failure of the metal pattern, such as debonding or wrinkling. We then fabricated a PDMS photomask and confirmed its nanoscale patterning resolution, with the smallest feature 51 nm in width under a 400-nm light source. We anticipate that our fabrication protocol will enable the application of cost-efficient and high-resolution near-field photolithography.(Received September 23, 2020; Accepted December 13, 2020)