The Journal of
the Korean Journal of Metals and Materials

The Journal of
the Korean Journal of Metals and Materials

Monthly
  • pISSN : 1738-8228
  • eISSN : 2288-8241

Editorial Office

Title Improvement of Photoelectrochemical Properties of CuO Photoelectrode by Li Doping
Authors 배성찬(Seongchan Bae); 이성혁(Sunghyeok Lee); 류혁현(Hyukhyun Ryu); 이원재(Won-jae Lee)
DOI https://doi.org/10.3365/KJMM.2022.60.8.577
Page pp.577-586
ISSN 1738-8228(ISSN), 2288-8241(eISSN)
Keywords CuO; Li-doped CuO; photoelectrode; photoelectrochemical (PEC); annealing temperature; spin coating deposition cycle
Abstract We fabricated a Li doped CuO photoelectrode by doping CuO with Li to improve the photoelectrochemical properties of the CuO photoelectrode. The fabricated Li doped CuO photoelectrode was optimized by experimentally investigating Li doping concentration, annealing temperature, and spin coating deposition cycle. It was confirmed that Li doped CuO had increased light absorption, decreased energy band gap, and improved crystallinity. The Li-doped CuO photoelectrode had a porous surface, unlike the bare CuO photoelectrode, and had a low charge transfer resistance as well as a high flat band potential. The Li doping concentration experiment demonstrated that the 2 at% Li doped CuO photoelectrode had a superior photocurrent density value compared with a bare CuO photoelectrode. In the annealing temperature optimization experiment with a 2 at% Li doped CuO photoelectrode, it was found to have the best photocurrent density value at 500℃. In experiments with various spin coating deposition cycles of the Li-doped CuO photoelectrode, the light absorption, energy bandgap, crystallinity, and electrical properties were affected by changes in the film thickness of the photoelectrode. In particular, we confirmed that a sample deposited with 4 spin coating cycles had the lowest interfacial resistance between the photoelectrode and the electrolyte, and the highest flat-band potential value. Consequently, we were able to obtain an improved photocurrent density of -1.68 mA/cm2 compared to the bare CuO photoelectrode using the Li-doped CuO photoelectrode under the optimized conditions of Li 2 at%, an annealing temperature of 500℃, and 4 cycles of spin coating depositions.(Received 28 February, 2022; Accepted 19 May, 2022)