| Title |
Thermal-Cycling-Induced Si3N4 Damage in Semiconductor Devices Assembled Utilizing a Lead-on-Chip Package |
| Authors |
이성민(Seong-min Lee); 김연욱(Yeon-wook Kim) |
| DOI |
https://doi.org/10.3365/KJMM.2023.61.2.76 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
semiconductor; chip; stress; fracture; reliability |
| Abstract |
This article shows how fractures in the Si3N4 layer, which comprises the top layer of semiconductor devices encapsulated utilizing a lead-on-chip (LOC) packaging technique, are influenced by changes in the lead-frame materials and thermal-cycling test conditions. Using thermal-cycling tests, it was found that fractures in the Si3N4 layer are the most sensitive to changes in the lead-frame materials at the early stage of thermal-cycling, between -65 ℃ and 150 ℃. Through SEM examinations and stress simulations, this work shows that adopting a copper lead-frame with a CTE-value similar to that of a package body effectively prevents filler-driven Si3N4 damage, providing semiconductor devices with better reliability margins during thermal-cycling.(Received 14 July, 2022; Accepted 14 November, 2022) |