| Title |
Pulsed UV-Assisted Annealing for Low-Temperature Processing of In2O3 Thin Films for TFT Applications |
| Authors |
(Xue Zhang) ; 이현주(Hyeonju Lee) ; 김보경(Bokyung Kim) ; 김태희(Taehui Kim) ; 김동욱(Dongwook Kim) ; 윤영준(Youngjun Yun) ; 김의직(Eui-Jik Kim) ; 박재훈(Jaehoon Park) |
| DOI |
https://doi.org/10.3365/KJMM.2025.63.10.812 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
Solution Processing; Oxide Semiconductor; Indium Oxide Thin Films; Pulsed UV?Assisted Annealing; Low-Temperature Processing; Thin-Film Transistors; Field-Effect Mobility |
| Abstract |
In this study, we explore the potential of pulsed ultraviolet (UV)-assisted thermal annealing as an
effective low-temperature processing technique for fabricating high-performance indium oxide (In2O3) thin
films, with a particular emphasis on their application in thin-film transistors (TFTs). In2O3 films were
synthesized using a solution-based method, with indium nitrate hydrate serving as the precursor. The
precursor solution was spin-coated onto SiNx/p+?Si substrates to form uniform thin films. To assess the
effectiveness of the annealing approaches, we compared conventional thermal annealing at 300 °C with pulsed
UV-assisted thermal annealing conducted at a reduced temperature of 200 °C. Characterization techniques?
including UV?Vis spectroscopy, X-ray diffraction, atomic force microscopy, and scanning electron
microscopy?revealed that pulsed UV-assisted annealing significantly improved the optical transparency,
crystallinity, and carrier concentration of the films, even at lower processing temperatures. Electrical
characterization of the resulting TFTs showed enhanced device performance, including higher drain currents
and improved field-effect mobility, compared to devices fabricated with conventionally annealed films. Despite
the improved electrical properties, the increased hydrophilicity of the UV-annealed films indicates the need
for additional surface passivation to ensure long-term device stability. Overall, this work demonstrates that
pulsed UV-assisted thermal annealing is a promising low-temperature processing strategy for the
development of transparent oxide semiconductors in next-generation electronic devices. |