| Title |
Electronic Transport Properties of Bi2Te2.7Se0.3 Fabricated by Hot Extrusion |
| Authors |
황정윤(Jeong Yun Hwang); (Rahidul Hasan); 이규형(Kyu Hyoung Lee) |
| DOI |
https://doi.org/10.3365/KJMM.2023.61.3.213 |
| ISSN |
1738-8228(ISSN), 2288-8241(eISSN) |
| Keywords |
thermoelectric; Bi2Te2.7Se0.3; electronic transport properties; hot extrusion; processing parameters |
| Abstract |
Herein we report the optimized processing conditions of hot extrusion for fabricating an n-type Bi2Te2.7Se0.3 thermoelectric compound, with high electronic transport properties as well as improved mechanical reliability. We fabricated a Bi2Te2.7Se0.3 extrudate that was 3.8 mm in diameter and 700 mm in length by controlling the processing parameters of temperature and pressure. A 3-point bending strength of over 70 MPa, which is 7 times higher that of the commercial zone melting ingot, was obtained in the samples prepared at 460 ℃ temperature under 6-6.5 MPa pressure. The samples benefitted from the formation of a highly-dense microstructure (relative density > 98%). It is noted that the electronic transport properties (electrical conductivity and Seebeck coefficient) could be manipulated by controlling the applied pressure of hot extrusion at 460 ℃, mainly due to the change in the characteristics of the 00l crystal orientation, which originated from grain rotation and rearrangement. Power factor values of ~2.9 mW/mK2 at 300 K and ~2.95 mW/mK2 at 320 K, similar to those of sintered bulks, were obtained in the hot extrudate fabricated under processing parameters of 460 ℃ and 6 MPa. Moreover, a high power factor value of 2.25 mW/mK2 was observed even at the high temperature of 480 K, which is 70% higher than that of Bi2Te2.7Se0.3 bulk fabricated by hot pressing.(Received 6 December, 2022; Accepted 20 December, 2022) |