The Journal of
the Korean Journal of Metals and Materials

The Journal of
the Korean Journal of Metals and Materials

Monthly
  • pISSN : 1738-8228
  • eISSN : 2288-8241

Editorial Office

REFERENCES

1 
Lee D. H., Nomura K., Kamiya T., Hosono H., IEEE Electron Device Lett,32, 1695 (2011)Google Search
2 
Billah M. M., Hasan M. M., Jang J., IEEE Electron Device Lett,38, 890 (2017)Google Search
3 
Park J.-S., Kim T.-W., Stryakhilev D., Lee J.-S., An S.-G., Pyo Y.-S., Lee D.-B., Mo Y. G., Jin D.-U., Chung H. K., Appl. Phys. Lett,95, 013503 (2009)Google Search
4 
Chien C. W., Wu C. H., Tsai Y. T., Kung Y. C., Lin C. Y., Hsu P. C., Hsieh H. H., Wu C. C., Yeh Y. H., Leu C. M., Lee T. M., IEEE Trans. Electron Devices,58, 1440 (2011)Google Search
5 
Jackson W. B., Hoffman R. L., Herman G. S., Appl. Phys. Lett,87, 193503 (2005)Google Search
6 
Ho S., Yu H., So F., Appl. Phys. Lett,111, 212103 (2017)Google Search
7 
Kaczmarski J., Taube A., Borysiewicz M. A., Myśliwiec M., Piskorski K., Stiller K., Kamińska E., IEEE Trans. Electron Devices,65, 129 (2018)Google Search
8 
Kamiya T., Nomura K., Hosono H., Sci. Technol. Adv. Mater,11, 044305 (2010)Google Search
9 
Nomura K., Ohta H., Takagi A., Kamiya T., Hirano M., Hosono H., Nature,432, 488 (2004)Google Search
10 
Lin Y.-J., Lee H.-Y., Hwang F.-T., Lee C.-T., J. Electron. Mater,30, 532 (2001)Google Search
11 
Yang Y., Yang S. S., Chou K., IEEE Electron Device Lett,31, 969 (2010)Google Search
12 
Ahn B. D., Jeong W. H., Shin H. S., Kim D. L., Kim H. J., Jeong J. K., Choi S.-H., Han M.-K., Electrochemical and Solid-State Letters,12, H430 (2009)Google Search
13 
Nakata M., Takechi K., Eguchi T., Tokumitsu E., Yamaguchi H., Kaneko S., Jpn. J. Appl. Phys,48, 081607 (2009)Google Search
14 
Nakata M., Takechi K., Azuma K., Tokumitsu E., Yamaguchi H., Kaneko S., Appl. Phys. Express,2, 021102 (2009)Google Search
15 
Yang Y. H., Yang S. S., Chou K. S., J. Soc. Inf. Disp,19, 247 (2011)Google Search
16 
Kim Y.-S., Choi J.-Y., Choe S.-H., Cha B.-C., Kong Y.-M., Kim D., Korean J. Met. Mater,58, 190 (2020)Google Search
17 
Park D., Yang Y., Kim K., Korean J. Met. Mater,59, 209 (2021)Google Search
18 
Sameshima T., Usui S., Sekiya M., IEEE Electron Device Lett,7, 276 (1986)Google Search
19 
Sera K., Okumura F., Uchida H., Itoh S., Kaneko S., Hotta K., IEEE Trans. Electron Devices,36, 2868 (1989)Google Search
20 
Kasischke M., Subaşı E., Bock C., Pham D.-V., Gurevich E. L., Kunze U., Ostendorf A., Appl. Surf. Sci,478, 299 (2019)Google Search
21 
Pavlikov A. V., Forsh P. A., Svyakhovskiy S. E., Matsukatova A. N., Forsh E. A., Kazanskii A. G., Kashkarov P. K., Appl. Phys. Lett,113, 203103 (2018)Google Search
22 
Perrie W., Rushton A., Gill M., Fox P., O’Neill W., Appl. Surf. Sci,248, 213 (2005)Google Search
23 
Zeng X., Zhang J., Huang F., J. Appl. Phys,111, 123525 (2012)Google Search
24 
Liu W., Li W., Hu Z., Tang Z., Tang X., J. Appl. Phys,110, 013901 (2011)Google Search
25 
Choi W., Kim H. Y., Jeon J. W., Chang W. S., Cho S.-H., Materials,10, 212 (2017)Google Search
26 
Hong L., Wang X. C., Zheng H. Y., Wang H., Yu H. Y., Appl. Surf. Sci,297, 134 (2014)Google Search
27 
Jung S. G., Lee K. W., Kim K. S., Shin S. W., Lee S. S., Om J. C., Bae G. H., Lee J. H., IEEE Trans. Electron Devices,55, 1020 (2008)Google Search
28 
Zhang B., Xie S., Xu J., Qian Q., Zhang Z., Xu K., IEEE Trans. Ind. Electron,64, 9052 (2017)Google Search
29 
Endo K., uchi S. I. O., Ishikawa Y., Liu Y., Matsukawa T., Sakamoto K., Masahara M., Tsukada J., Ishii K., Yamauchi H., Suzuki E., IEEE Electron Device Lett,30, 757 (2009)Google Search
30 
Jiang Y., Narushima T., Okamoto H., Nat. Phys,6, 1005 (2010)Google Search
31 
Hosoi T., Kutsuki K., Okamoto G., Saito M., Shimura T., Watanabe H., Appl. Phys. Lett,94, 202112 (2009)Google Search
32 
Iwamoto K., Kamimuta Y., Ogawa A., Watanabe Y., Migita S., Mizubayashi W., Morita Y., Takahashi M., Ota H., Nabatame T., Toriumi A., Appl. Phys. Lett,92, 132907 (2008)Google Search
33 
Takada T., Hayase Y., Tanaka Y., Okamoto T., IEEE Trans. Dielectr Electr Insul,15, 152 (2008)Google Search
34 
Tsay C.-Y., Wang M.-C., Chiang S.-C., J. Electron. Mater,38, 1962 (2009)Google Search
35 
Shin Y., Kim S. T., Kim K., Kim M. Y., Oh S., Jeong J. K., Sci. Rep,7, 1 (2017)Google Search
36 
Jeong S.-K., Kim M.-H., Lee S., Seo H., Choi D.-K., Nanoscale Res. Lett,9, 619 (2014)Google Search
37 
Chen T., Wu M.-Y., Ishihara R., Nomura K., Kamiya T., Hosono H., Beenakker C. M, J. Mater. Sci. Mater. Electron,22, 1694 (2011)Google Search
38 
Grimaud A., Diaz-Morales O., Han B., Hong W. T., Lee Y.-L., Giordano L., Stoerzinger K. A., Koper M. T. M., Shao-Horn Y., Nat. Chem,9, 457 (2017)Google Search
39 
Patil S., Seal S., Guo Y., Schulte A., Norwood J., Appl. Phys. Lett,88, 243110 (2006)Google Search
40 
Hou Y., Wen Z., Cui S., Feng X., Chen J., Nano Lett,16, 2268 (2016)Google Search
41 
Ma R., Sasaki T., Adv. Mater,22, 5082 (2010)Google Search
42 
Wu K., Zhang S., Xu Z., Chen X., Li L., IEEE Trans. Electron Devices,62, 4220 (2015)Google Search
43 
Kergoat L., Herlogsson L., Piro B., Pham M. C., Horowitz G., Crispin X., Berggren M., Proc. Natl. Acad. Sci,109, 8394 (2012)Google Search
44 
Kim J. B., Fuentes-Hernandez C., Kim S. J., Choi S., Kippelen B., Org. Electron,11, 1074 (2010)Google Search